FR
Auteur / Autrice : | Luca Lucci |
Direction : | Sorin Cristoloveanu, Luca Selmi |
Type : | Thèse de doctorat |
Discipline(s) : | Micro et nanoélectronique |
Date : | Soutenance en 2007 |
Etablissement(s) : | Grenoble INPG |
Résumé
FR |
EN
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advantages of innovative device architectures incorporating different channel materials (Si, Ge, strained-Si) and crystal orientations need to be assessed. The body thickness of Ultra-Thin-Body (UTB) SOI devices has become a new design parameter, and its influence on the channel transport properties must be evaluated for device optimization. Ln order to tackle all these modeling issues in a general framework, a new self-consistent Multi-Subband Monte Carlo simulator for nano-MOSFETs has been developed. It rigorously accounts for the effect of quantization on the electrostatics, the transport mass and the scattering rates.